The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Direct observation of doping incorporation pathways in self-catalytic GaMnAs nanowires

På svenska

Author

  • T. Kasama
  • M. Thuvander
  • A. Siusys
  • L. C. Gontard
  • A. Kovacs
  • S. Yazdi
  • M. Duchamp
  • Anders Gustafsson
  • R. E. Dunin-Borkowski
  • Janusz Sadowski

Summary, in English

Doping mechanisms of Mn in GaAs nanowires (NWs) that have been grown self-catalytically at 600 degrees C by molecular beam epitaxy (MBE) are investigated using advanced electron microscopy techniques and atom probe tomography, Mn is found to be incorporated primarily in the form of non-magnetic tetragonal Ga0.82Mn0.18 nanocrystals in Ga catalyst droplets at the ends of the NWs, while trace amounts of Mn (22 +/- 4 at. ppm) are also distributed randomly in the NW bodies without forming clusters or precipitates. The nanocrystals are likely to form after switching off the reaction in the MBE chamber, since they are partially embedded in neck regions of the NWs. The Ga0.82Mn0.18 nanocrystals and the low Mn concentration in the NW bodies are insufficient to induce a ferromagnetic phase transition, suggesting that it is difficult to have high Mn contents in GaAs even in 1-D NW growth via the vapor-liquid-solid process. (C) 2015 AIP Publishing LLC.

Publishing year

2015

Language

English

Publication/Series

Applied Physics Reviews

Volume

118

Issue

5

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Subatomic Physics
  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Other

  • ISSN: 1931-9401