The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Wurtzite-zincblende superlattices in InAs nanowires using a supply interruption method.

På svenska

Author

Summary, in English

Crystal phase control in single III-V semiconductor nanowires has emerged recently as an important challenge and possible complement to conventional bandgap engineering in single material systems. Here we investigate a supply interruption method for precise crystal phase control in single nanowires. The nanowires are grown by metalorganic vapor phase epitaxy using gold particles as seeds and are analyzed by transmission electron microscopy. It is observed that wurtzite segments with controlled length and position can be inserted on demand into a pure InAs zincblende nanowire. The interface between wurtzite and zincblende segments can be made atomically sharp and the segments can be made only a few bilayers in thickness. The growth mechanisms, applicability and limitations of the technique are presented and discussed.

Publishing year

2011

Language

English

Publication/Series

Nanotechnology

Volume

22

Issue

26

Document type

Journal article

Publisher

IOP Publishing

Topic

  • Nano Technology

Status

Published

ISBN/ISSN/Other

  • ISSN: 0957-4484