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Zincblende-to-wurtzite interface improvement by group III loading in Au-seeded GaAs nanowires

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Author

Summary, in English

Achieving control of the crystal structure is essential in III-V nanowires, since twin defects, stacking faults and uncontrolled zincblende-wurtzite polytypism could have detrimental effects on the physical properties. In addition, precise control of the crystal phases also opens up the possibility of homomaterial bandgap engineering. Here, we show by ex situ chemical analysis of the alloy seed particle that Ga-rich conditions are required for growth of wurtzite GaAs nanowires using Au seed particles in MOVPE. Based on this understanding, we propose and demonstrate a growth procedure to significantly improve the crystal structure quality of the zincblende-to-wurtzite transition in GaAs nanowire heterostructures. ((c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Publishing year

2013

Language

English

Pages

855-859

Publication/Series

Physica Status Solidi. Rapid Research Letters

Volume

7

Issue

10

Document type

Journal article

Publisher

John Wiley & Sons Inc.

Topic

  • Condensed Matter Physics

Keywords

  • GaAs
  • nanowires
  • polytypism
  • heterostructures
  • metal-organic vapour
  • phase epitaxy

Status

Published

ISBN/ISSN/Other

  • ISSN: 1862-6254