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Enhanced sputtering and incorporation of Mn in implanted GaAs and ZnO nanowires

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Summary, in English

We simulated and experimentally investigated the sputter yield of ZnO and GaAs nanowires, which were implanted with energetic Mn ions at room temperature. The resulting thinning of the nanowires and the dopant concentration with increasing Mn ion fluency were measured by accurate scanning electron microscopy (SEM) and nano-x-Ray Fluorescence (nanoXRF) quantification, respectively. We observed a clearly enhanced sputter yield for the irradiated nanowires compared to bulk, which is also corroborated by iradina simulations. These show a maximum if the ion range matches the nanowire diameter. As a consequence of the erosion thinning of the nanowire, the incorporation of the Mn dopants is also enhanced and increases non-linearly with increasing ion fluency.

Publishing year

2014

Language

English

Publication/Series

Journal of Physics D: Applied Physics

Volume

47

Issue

39

Document type

Journal article

Publisher

IOP Publishing

Topic

  • Chemical Sciences
  • Condensed Matter Physics

Keywords

  • ion beam
  • sputter yield
  • nanowires
  • x-ray fluorescence
  • GaAs
  • ZnO
  • monte
  • carlo simulation

Status

Published

ISBN/ISSN/Other

  • ISSN: 1361-6463