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RF and DC Analysis of Stressed InGaAs MOSFETs

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Author

Summary, in English

A complete reliability study of the DC and RF characteristics for InGaAs nMOSFETs with aluminium oxide/ hafnium oxide dielectric is presented. The main stress variation at high frequencies is related to a threshold voltage shift, whereas no decrease is found in the maximum of the cut-off frequency and RF-transconductance. Constant gate stress leads to a charge build up causing a threshold voltage shift. Furthermore, electron trapping at the drain side degrades the performance after hot carrier stress. The maximum DC-transconductance is reduced following constant gate bias stress, by an increase in charge trapping at border defects. These border defects at the channel/high-k interface are filled by cold carrier trapping when the transistor is turned on, whereas they do not respond at high frequencies.

Publishing year

2014

Language

English

Pages

181-183

Publication/Series

IEEE Electron Device Letters

Volume

35

Issue

2

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc., IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • high-k
  • InGaAs
  • MOSFET
  • reliablity
  • RF

Status

Published

ISBN/ISSN/Other

  • ISSN: 0741-3106