The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Cu particle seeded InP InAs axial nanowire heterostructures

Author

Summary, in English

We demonstrate the epitaxial growth of alternating InP-InAs nanowire heterostructures using Cu seed particles in MOVPE. We observe extraordinary early stages in the formation of InAs segments, e.g. three-dimensional nucleation instead of step-flow growth. Furthermore, InAs segments of thin nanowires exhibit extended 4H crystal structure.

Publishing year

2013

Language

English

Pages

850-854

Publication/Series

Physica Status Solidi. Rapid Research Letters

Volume

7

Issue

10

Document type

Journal article

Publisher

John Wiley & Sons Inc.

Topic

  • Condensed Matter Physics

Keywords

  • nanowires
  • heterostructures
  • metal-organic vapour phase epitaxy
  • MOVPE
  • catalyst particles

Status

Published

ISBN/ISSN/Other

  • ISSN: 1862-6254