Cu particle seeded InP InAs axial nanowire heterostructures
Author
Summary, in English
We demonstrate the epitaxial growth of alternating InP-InAs nanowire heterostructures using Cu seed particles in MOVPE. We observe extraordinary early stages in the formation of InAs segments, e.g. three-dimensional nucleation instead of step-flow growth. Furthermore, InAs segments of thin nanowires exhibit extended 4H crystal structure.
Department/s
Publishing year
2013
Language
English
Pages
850-854
Publication/Series
Physica Status Solidi. Rapid Research Letters
Volume
7
Issue
10
Document type
Journal article
Publisher
John Wiley & Sons Inc.
Topic
- Condensed Matter Physics
Keywords
- nanowires
- heterostructures
- metal-organic vapour phase epitaxy
- MOVPE
- catalyst particles
Status
Published
ISBN/ISSN/Other
- ISSN: 1862-6254