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InN quantum dots on GaN nanowires grown by MOVPE

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Author

Summary, in English

In this work, growth of InN quantum dots (QDs) on GaN nanowires (NWs) by metal-organic vapour phase epitaxy is demonstrated, illustrating the feasibility to combine 0D and 1D structures for nitride semiconductors. Selective area growth was used to generate arrays of c-oriented GaN NWs using Si3N4 as the mask material. In general, InN QDs tend to form at the NW edges between the m-plane side facets, but the QD growth can also be tuned to the side facets by controlling the growth temperature and the growth rate. TEM characterization reveals that I1-type stacking faults are formed in the QDs and originate from the misfit dislocations at the InN/GaN interface. Photoluminescence measurement at 4 K shows that the peak shifts to high energy with reduced dot size. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Publishing year

2014

Language

English

Pages

421-424

Publication/Series

physica status solidi (c)

Volume

11

Document type

Journal article

Publisher

Wiley-Blackwell

Topic

  • Condensed Matter Physics
  • Chemical Sciences

Keywords

  • quantum dots
  • nanowires
  • nitride
  • MOVPE

Conference name

10th International Conference on Nitride Semiconductors (ICNS)

Conference date

2013-08-25 - 2013-08-30

Status

Published

ISBN/ISSN/Other

  • ISSN: 1862-6351