Confinement in Thickness-Controlled GaAs Polytype Nanodots.
Author
Summary, in English
Polytype nanodots are arguably the simplest nanodots than can be made, but their technological control was, up to now, challenging. We have developed a technique to produce nanowires containing exactly one polytype nanodot in GaAs with thickness control. These nanodots have been investigated by photoluminescence, which has been cross-correlated with transmission electron microscopy. We find that short (4-20 nm) zincblende GaAs segments/dots in wurtzite GaAs confine electrons and that the inverse system confines holes. By varying the thickness of the nanodots we find strong quantum confinement effects which allows us to extract the effective mass of the carriers. The holes at the top of the valence band have an effective mass of approximately 0.45 m0 in wurtzite GaAs. The thinnest wurtzite nanodot corresponds to a twin plane in zincblende GaAs and gives efficient photoluminescence. It binds an exciton with a binding energy of roughly 50 meV, including central cell corrections.
Department/s
Publishing year
2015
Language
English
Pages
2652-2656
Publication/Series
Nano Letters
Volume
15
Issue
4
Links
Document type
Journal article
Publisher
The American Chemical Society (ACS)
Topic
- Nano Technology
- Condensed Matter Physics
Status
Published
Research group
- Neuronano Research Center (NRC)
ISBN/ISSN/Other
- ISSN: 1530-6992