The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Rotated domain network in graphene on cubic-SiC(001)

På svenska

Author

  • Alexander N. Chaika
  • Olga V. Molodtsova
  • Alexei Zakharov
  • Dmitry Marchenko
  • Jaime Sanchez-Barriga
  • Andrei Varykhalov
  • Sergey V. Babenkov
  • Marc Portail
  • Marcin Zielinski
  • Barry E. Murphy
  • Sergey A. Krasnikov
  • Olaf Luebben
  • Igor V. Shvets
  • Victor Y. Aristov
Show all

Summary, in English

The atomic structure of the cubic-SiC(001) surface during ultra-high vacuum graphene synthesis has been studied using scanning tunneling microscopy (STM) and low-energy electron diffraction. Atomically resolved STM studies prove the synthesis of a uniform, millimeter-scale graphene overlayer consisting of nanodomains rotated by +/- 13.5 degrees relative to the < 110 >-directed boundaries. The preferential directions of the domain boundaries coincide with the directions of carbon atomic chains on the SiC(001)-c(2 x 2) reconstruction, fabricated prior to graphene synthesis. The presented data show the correlation between the atomic structures of the SiC(001)-c(2 x 2) surface and the graphene/SiC(001) rotated domain network and pave the way for optimizing large-area graphene synthesis on low-cost cubic-SiC(001)/Si(001) wafers.

Department/s

Publishing year

2014

Language

English

Publication/Series

Nanotechnology

Volume

25

Issue

13

Document type

Journal article

Publisher

IOP Publishing

Topic

  • Nano Technology

Keywords

  • graphene
  • cubic-SiC(001)
  • nanoribbons
  • synthesis
  • STM imaging

Status

Published

ISBN/ISSN/Other

  • ISSN: 0957-4484