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Photoemission study of LT-GaAs

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Author

  • S Mickevicius
  • Janusz Sadowski
  • S Balakauskas
  • A Leandersson

Summary, in English

The electronic structure of GaAs (100) grown by low-temperature molecular beam epitaxy was investigated by means of photoemission spectroscopy. Slight differences are found in the valence band spectra of GaAs layers grown at different As-2/Ga flux ratios. Analysis of As 3d core level spectra does not indicate qualitative differences in respect to high temperature grown GaAs (100) layers. The Ga 3d core level spectra include a new component in comparison to the spectra of high temperature grown GaAs. The origin of this component is attributed to high density of As antisites in low-temperature grown GaAs. (C) 2004 Elsevier B.V. All rights reserved.

Department/s

Publishing year

2004

Language

English

Pages

234-238

Publication/Series

Proceedings of the European Materials Research Society Fall Meeting, Symposium B (Journal of Alloys and Compounds)

Volume

382

Issue

1-2

Document type

Conference paper

Publisher

Elsevier

Topic

  • Physical Sciences
  • Natural Sciences

Keywords

  • crystal growth
  • semiconductors
  • synchrotron radiation
  • photoemission
  • spectroscopy
  • valence band
  • antisite defect
  • gallium arsenide
  • molecular beam epitaxy

Conference name

European Materials Research Society Fall Meeting, 2003

Conference date

2003-09-15 - 2003-09-19

Conference place

Warsaw, Poland

Status

Published

ISBN/ISSN/Other

  • ISSN: 0925-8388