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Doping profile of InP nanowires directly imaged by photoemission electron microscopy

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Author

Summary, in English

InP nanowires (NWs) with differently doped segments were studied with nanoscale resolution using synchrotron based photoemission electron microscopy. We clearly resolved axially stacked n-type and undoped segments of the NWs without the need of additional processing or contacting. The lengths and relative doping levels of different NW segments as well as space charge regions were determined indicating memory effects of sulfur during growth. The surface chemistry of the nanowires was monitored simultaneously, showing that in the present case, the doping contrast was independent of the presence or absence of a native oxide. (C) 2011 American Institute of Physics. [doi:10.1063/1.3662933]

Publishing year

2011

Language

English

Publication/Series

Applied Physics Letters

Volume

99

Issue

23

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Natural Sciences
  • Physical Sciences
  • Atom and Molecular Physics and Optics
  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Other

  • ISSN: 0003-6951