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High rate reactive dc magnetron sputter deposition of Al2O3 films

På svenska

Author

  • Maryam Olsson
  • Karol Macak
  • Ulf Helmersson
  • Björn Hjörvarsson

Summary, in English

Aluminum oxide films were produced by reactive dc magnetron sputtering of Al in Ar+O2. The composition of the films was characterized by Rutherford backscattering measurements. Stoichiometric films possessed excellent optical properties with a refractive index of ∼1.6 for visible and near-infrared light. It was possible to produce stoichiometric films while keeping the target in the metallic mode of operation; the resulting deposition rate was 23 nm min−1, as compared to 0.95 nm min−1 for filmsgrown from an oxidized target. An O/Al arrival rate ratio exceeding ∼17 was required for stoichiometric films to be grown at room temperature. The success of the present high-rate deposition strategy hinges on the use of a suitable deposition system geometry — including a large target-to-substrate distance and a small target size — and on the use of sufficient Ar pressure. Monte Carlo simulations are presented; they can be reconciled with our empirical data.

Publishing year

1998

Language

English

Pages

639-639

Publication/Series

Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films

Volume

16

Issue

2

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Social Sciences Interdisciplinary
  • Other Engineering and Technologies not elsewhere specified

Status

Published

ISBN/ISSN/Other

  • ISSN: 1520-8559