Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires

Summary, in English

The strain distribution in heterostructured wurtzite InAs/InP nanowires is measured by a peak finding technique using high resolution transmission electron microscopy images. We find that nanowires with a diameter of about 20 nm show a 10 nm strained area over the InAs/InP interface and the rest of the wire has a relaxed lattice structure. The lattice parameters and elastic properties for the wurtzite structure of InAs and InP are calculated and a nanowire interface is simulated using finite element calculations. Both the method and the experimental results are validated using a combination of finite element calculations and image simulations.

• Author: Magnus Larsson; Jakob Wagner; Mathias Wallin; Paul Håkansson; Linus Fröberg; Lars Samuelson; Reine Wallenberg
• Department/s: Centre for Analysis and Synthesis; Solid Mechanics; Solid State Physics
• Publishing year: 2007
• Language: English
• Publication/Series: Nanotechnology
• Volume: 18
• Issue: 1
• Links: http://www.iop.org/EJ/abstract/0957-4484/18/1/015504; http://www.ladon.se/cv/documents/abstractNODE2006.pdf; http://dx.doi.org/10.1088/0957-4484/18/1/015504
• Document type: Journal article
• Publisher: IOP Publishing
• Topic: Nano Technology
• Status: Published
• ISBN/ISSN/Other: ISSN: 0957-4484