Current−Voltage Characterization of Individual As-Grown Nanowires Using a Scanning Tunneling Microscope

Summary, in English

Utilizing semiconductor nanowires for (opto)- electronics requires exact knowledge of their current−voltage properties. We report accurate on-top imaging and I−V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I−V properties with a very small spread in measured values compared to standard techniques.

• Author: Rainer Timm; Olof Persson; David Engberg; Alexander Fian; James Webb; Jesper Wallentin; Andreas Jönsson; Magnus Borgström; Lars Samuelson; Anders Mikkelsen
• Department/s: Synchrotron Radiation Research; Department of Physics; NanoLund: Centre for Nanoscience
• Publishing year: 2013
• Language: English
• Pages: 5182-5189
• Publication/Series: Nano Letters
• Volume: 13
• Issue: 11
• Links: http://dx.doi.org/10.1021/nl402570u
• Document type: Journal article
• Publisher: The American Chemical Society (ACS)
• Topic: Nano Technology
• Keywords: semiconductor nanowire; scanning tunneling microscopy; Ohmic contact; nanowire contacts; resistivity
• Status: Published
• Research group: Nanometer structure consortium (nmC)
• ISBN/ISSN/Other: ISSN: 1530-6992