Vertical high-mobility wrap-gated InAs nanowire transistor
Author
Summary, in English
In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs nanowires [Proc. DRC, 2005, p. 157]. The nanowires have a diameter of 80 nm and are grown using selective epitaxy; a matrix of typically 10 x 10 vertically standing wires is used as channel in the transistor. The authors measure current saturation at V-ds = 0.15 V (V-g = 0 V), and a high mobility, compared to the previous nanowire transistors, is deduced.
Publishing year
2006
Language
English
Pages
323-325
Publication/Series
IEEE Electron Device Letters
Volume
27
Issue
5
Document type
Journal article
Publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
Topic
- Electrical Engineering, Electronic Engineering, Information Engineering
- Condensed Matter Physics
Keywords
- field-effect transistor (FET)
- wrap gate
- nanowires
- InAs
Status
Published
ISBN/ISSN/Other
- ISSN: 0741-3106