Surface and electronic structure of epitaxial PtLuSb (001) thin films

Summary, in English

The surface and electronic structure of single crystal thin films of PtLuSb (001) grown by molecular beam epitaxy were studied. Scanning tunneling spectroscopy (STS), photoemission spectroscopy, and temperature dependent Hall measurements of PtLuSb thin films are consistent with a zero-gap semiconductor or semi-metal. STS and photoemission measurements show a decrease in density of states approaching the Fermi level for both valence and conduction bands as well as a slight shift of the Fermi level position into the valence band. Temperature dependent Hall measurements also corroborate the Fermi level position by measurement of p-type carriers. (C) 2014 AIP Publishing LLC.

• Author: Sahil J. Patel; Jason K. Kawasaki; John Logan; Brian D. Schultz; Johan Adell; Balasubramanian Thiagarajan; Anders Mikkelsen; Chris J. Palmstrom
• Department/s: MAX IV Laboratory; Synchrotron Radiation Research; NanoLund: Centre for Nanoscience
• Publishing year: 2014
• Language: English
• Publication/Series: Applied Physics Letters
• Volume: 104
• Issue: 20
• Links: http://dx.doi.org/10.1063/1.4879475
• Document type: Journal article
• Publisher: American Institute of Physics (AIP)
• Topic: Atom and Molecular Physics and Optics; Physical Sciences; Natural Sciences
• Status: Published
• ISBN/ISSN/Other: ISSN: 0003-6951