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A 1V SiGe Power Amplifier for 81-86 GHz E-band

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Author

Summary, in English

This paper presents an architecture for a SiGe E-band power amplifier using a stacked transformers for output power combination. According to simulations, at E-band frequencies, the power combiner consisting of two individual single turn transformers performs significantly better compared to a single common 2:1 transformer with two turns on the secondary side. The power combination allows for a low supply voltage of 1 V, which is beneficial since the supply can be shared between the power amplifier and the transceiver thereby eliminating the need of a separate voltage regulator. To improve the gain of the two-stage amplifier it employs a capacitive cross-coupling technique not yet seen in mm-wave SiGe PAs. The PA is designed in a SiGe process with fr = 200 GHz and achieves a power gain of 12dB, a saturated output power of 16dBm and a 14% peak PAE.

Publishing year

2013

Language

English

Pages

1-4

Publication/Series

[Host publication title missing]

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • PA

Conference name

NORCHIP Conference, 2013

Conference date

2013-11-11 - 2013-11-12

Conference place

Vilnius, Lithuania

Status

Published

Research group

  • Analog RF