Fabrication and improvement of nanopillar InGaN/GaN light-emitting diodes using nanosphere lithography
Author
Summary, in English
Surface-patterning technologies have enabled the improvement of currently existing light-emitting diodes (LEDs) and can be used to overcome the issue of low quantum efficiency of green GaN-based LEDs. We have applied nanosphere lithography to fabricate nanopillars on InGaN/GaN quantum-well LEDs. By etching through the active region, it is possible to improve both the light extraction efficiency and, in addition, the internal quantum efficiency through the effects of lattice strain relaxation. Nanopillars of different sizes are fabricated and analyzed using Raman spectroscopy. We have shown that nanopillar LEDs can be significantly improved by applying a combination of ion-damage curing techniques, including thermal and acidic treatment, and have analyzed their effects using x-ray photoelectron spectroscopy. (C) 2015 Society of Photo-Optical Instrumentation Engineers (SPIE)
Publishing year
2015
Language
English
Publication/Series
Journal of Nanophotonics
Volume
9
Issue
1
Full text
Document type
Journal article
Publisher
SPIE
Topic
- Nano Technology
Keywords
- light-emitting diodes
- gallium nitride
- nanopillar
- damage treatment
Status
Published
Research group
- Neuronano Research Center (NRC)
ISBN/ISSN/Other
- ISSN: 1934-2608