Electronic- and band-structure evolution in low-doped (Ga,Mn)As

Summary, in English

Modulation photoreflectance spectroscopy and Raman spectroscopy have been applied to study the electronic- and band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn doping in the range of low Mn content, up to 1.2%. Structural and magnetic properties of the

layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery,respectively. The revealed results of decrease in the band-gap-transition energy with increasing Mn content in very low-doped (Ga,Mn)As layers with n-type conductivity are interpreted as a result of merging the Mn-related impurity band with the host GaAs valence band. On the other hand, an increase in the band-gap-transition energy with increasing Mn content in (Ga,Mn)As layers with higher Mn content and p-type conductivity indicates the Moss-Burstein shift of the absorption edge due to the Fermi level location within the valence band, determined by the free hole concentration. The experimental results are consistent with the valence-band origin of

mobile holes mediating ferromagnetic ordering in the (Ga,Mn)As diluted ferromagnetic semiconductor.

• Author: Oksana Yastrubchak; Janusz Sadowski; Hanna Krzyzanowska; Lukasz Gluba; Jerzy Zuk; Jaroslaw Domagala; Tomasz Andrearczyk; Tadeusz Wosinski
• Department/s: MAX IV Laboratory
• Publishing year: 2013
• Language: English
• Pages: 7-053710
• Publication/Series: Applied Physics Reviews
• Volume: 114
• Issue: 5
• Links: http://dx.doi.org/10.1063/1.4817420
• Document type: Journal article
• Publisher: American Institute of Physics (AIP)
• Topic: Natural Sciences; Physical Sciences
• Keywords: ferromagnetic semiconductors; molecular beam epitaxy; spintronics
• Status: Published
• ISBN/ISSN/Other: ISSN: 1931-9401