Bismuth-containing c(4 x 4) surface structure of the GaAs(100) studied by synchrotron-radiation photoelectron spectroscopy and ab initio calculations

Summary, in English

Bismuth (Bi) induced c(4 x 4) surface structure of the GaAs(1 0 0) substrate, i.e., the GaAs(1 0 0)c(4 x 4)-Bi surface has been studied with synchrotron-radiation photoelectron spectroscopy and ab initio calculations. The surface was prepared by combining molecular beam epitaxy and in situ electron diffraction methods, and then the sample was transferred to a photoemission chamber without breaking ultrahigh vacuum conditions. Calculations show that the c(4 x 4)13 type unit cells, which consist of Bi-Bi and Bi-As dimers, are energetically favored on the surface and that Bi atoms occupy only the topmost atomic sites bonding to the As layer below. The presence of the c(4 x 4)(3 structure is supported by the comparison of measured and calculated core-level shifts of the GaAs(1 00)c(4 x 4)-Bi surface. Simulated scanning-tunneling-microscopy (STM) images, based on the suggested models, are presented for the comparison with future STM measurements. (C) 2014 Elsevier B.V. All rights reserved.

• Author: P. Laukkanen; M. P. J. Punkkinen; J. J. K. Lang; Janusz Sadowski; M. Kuzmin; K. Kokko
• Department/s: MAX IV Laboratory
• Publishing year: 2014
• Language: English
• Pages: 34-38
• Publication/Series: Journal of Electron Spectroscopy and Related Phenomena
• Volume: 193
• Links: http://dx.doi.org/10.1016/j.elspec.2014.02.008
• Document type: Journal article
• Publisher: Elsevier
• Topic: Physical Sciences; Natural Sciences
• Keywords: Core-level shift; Synchrotron-radiation spectroscopy; Ab initio; Surface; reconstruction; Gallium arsenide; Bismuth
• Status: Published
• ISBN/ISSN/Other: ISSN: 0368-2048