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Metal oxide nanoparticles as novel gate materials for field-effect gas sensors

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Author

  • S Roy
  • A Salomonsson
  • A Lloyd Spetz
  • C Aulin
  • PO Kall
  • L Ojamae
  • M Strand
  • Mehri Sanati

Summary, in English

Oxide nanoparticle layers have shown interesting behavior as gate materials for high temperature (typically at 300-400°C) metal-insulator-silicon carbide (MISiC) capacitive sensors. Distinct shifts in the depletion region of the C-V (capacitance-voltage) characteristics could be observed while switching between different oxidizing and reducing gas ambients (air, O2, H2, NH3, CO, NOx, C3H6). Shifts were also noticed in the accumulation region of the C-V curves, which can be attributed to the change in resistivity of the gate material. Sensor response patterns have been found to depend on operating temperature.

Publishing year

2006

Language

English

Pages

275-278

Publication/Series

Materials and Manufacturing Processes

Volume

21

Issue

3

Document type

Journal article

Publisher

Taylor & Francis

Topic

  • Production Engineering, Human Work Science and Ergonomics

Keywords

  • accumulation region
  • adsorption
  • capacitance voltage (C-V)
  • depletion region
  • field-effect
  • gas sensors
  • gate material
  • high frequency
  • high temperature
  • interface
  • metal-insulator-seimconductor (MISIC)
  • nano particles
  • ruthenium oxide
  • silicon carbide
  • transient response

Status

Published

ISBN/ISSN/Other

  • ISSN: 1042-6914