InAs nanowire MOSFET differential active mixer on Si-substrate

Summary, in English

An active single balanced down-conversion mixer is implemented using InAs nanowire metal oxide semiconductor field effect transistors (MOSFETs) as both active devices and passive resistive loads. Circuits with 6 dB low-frequency voltage gain and a 3 dB bandwidth of 2 GHz are measured for a DC power consumption of 3.8 mW from a 1.5 V supply. The circuits are fabricated using contacts made with 12 μmline- width optical lithography.

• Author: Karl-Magnus Persson; Martin Berg; Henrik Sjöland; Erik Lind; Lars-Erik Wernersson
• Department/s: Department of Electrical and Information Technology; NanoLund: Centre for Nanoscience; ELLIIT: the Linköping-Lund initiative on IT and mobile communication
• Publishing year: 2014
• Language: English
• Pages: 682-682
• Publication/Series: Electronics Letters
• Volume: 50
• Issue: 9
• Links: http://dx.doi.org/10.1049/el.2013.4219
• Document type: Journal article
• Publisher: IEE
• Topic: Electrical Engineering, Electronic Engineering, Information Engineering
• Keywords: circuit; RF; InAs; mixer; nanowire; MOSFET
• Status: Published
• Project: EIT_WWW Wireless with Wires
• Research group: Nano
• ISBN/ISSN/Other: ISSN: 1350-911X