InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors.
Author
Summary, in English
InAs/GaSb nanowire heterostructures with thin GaInAs inserts were grown by MOVPE and characterized by electrical measurements and transmission electron microscopy. Down-scaling of the insert thickness was limited because of an observed sensitivity of GaSb nanowire growth to the presence of In. By employing growth interrupts in between the InAs and GaInAs growth steps it was possible to reach an insert thickness down to 25 nm. Two-terminal devices show a diode behavior, where temperature-dependent measurements indicate a heterostructure barrier height of 0.5 eV, which is identified as the valence band offset between the InAs and GaSb. Three-terminal transistor structures with a top-gate positioned at the heterointerface show clear indications of band-to-band tunnelling.
Department/s
Publishing year
2010
Language
English
Pages
4080-4085
Publication/Series
Nano Letters
Volume
10
Issue
Online August 24, 2010
Document type
Journal article
Publisher
The American Chemical Society (ACS)
Topic
- Nano Technology
- Condensed Matter Physics
Status
Published
Research group
- Nano
ISBN/ISSN/Other
- ISSN: 1530-6992