The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Compressibility and thermal expansion of cubic silicon nitride

På svenska

Author

  • J. Z. Jiang
  • H. Lindelov
  • L. Gerward
  • K. Ståhl
  • J. M. Recio
  • P. Mori-Sanchez
  • S. Carlson
  • M. Mezouar
  • E. Dooryhee
  • A. Fitch
  • D. J. Frost
Show all

Summary, in English

The compressibility and thermal expansion of the cubic silicon nitride (c-Si3N4) phase have been investigated by performing in situ x-ray powder-diffraction measurements using synchrotron radiation, complemented with computer simulations by means of first-principles calculations. The bulk compressibility of the c-Si3N4 phase originates from the average of both Si-N tetrahedral and octahedral compressibilities where the octahedral polyhedra are less compressible than the tetrahedral ones. The origin of the unit cell expansion is revealed to be due to the increase of the octahedral Si-N and N-N bond lengths with temperature, while the lengths for the tetrahedral Si-N and N-N bonds remain almost unchanged in the temperature range 295-1075 K.

Department/s

Publishing year

2002-04-15

Language

English

Pages

1612021-1612024

Publication/Series

Physical Review B (Condensed Matter)

Volume

65

Issue

16

Document type

Journal article

Publisher

American Physical Society

Status

Published

ISBN/ISSN/Other

  • ISSN: 0163-1829