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Photon mapping of single quantum dots by scanning tunneling microscopy induced luminescence spectroscopy

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Author

Summary, in English

Scanning tunneling microscopy induced luminescence (STML) has been used to investigate individual self-assembled InP quantum dots overgrown with GaInP. We will present results correlating the surface morphology with the optical properties of single dots. In particular, the strain induced energy-shift of the dot emission with increasing cap layer thickness and its relation to the overgrowth will be discussed. Effects of the dots on the properties of the overgrown GaInP will also be treated. STML spectra and monochromatic photon maps are compared with results from photoluminescence and transmission electron microscopy measurements. Furthermore, a comparison with theoretical calculations is made

Publishing year

2002

Language

English

Publication/Series

7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science

Document type

Conference paper

Publisher

Lund University

Topic

  • Condensed Matter Physics

Keywords

  • single quantum dots
  • Photon mapping
  • scanning tunneling microscopy
  • luminescence spectroscopy
  • self-assembled InP quantum dots
  • optical properties
  • surface morphology
  • strain induced energy-shift
  • increasing cap layer thickness
  • STML spectra
  • dot emission
  • photon maps
  • transmission electron microscopy
  • GaInP
  • photoluminescence

Conference name

Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)

Conference date

2002-06-24 - 2002-06-28

Conference place

Malmö, Sweden

Status

Published