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Low Temperature CVD of Thin, Amorphous Boron-Carbon Films for Neutron Detectors

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Author

  • Henrik Pedersen
  • Carina Höglund
  • Jens Birch
  • Jens Jensen
  • Anne Henry

Summary, in English

Thin, amorphous boron-carbon films are deposited at low temperature (400600?degrees C) by thermally activated CVD using the organoborane triethylboron (TEB) as a single precursor. Two different carrier gases are tested. At 600?degrees C, using argon as the carrier gas, the deposition rate is close to 1?mu m h-1. The film has a density of 2.14?g?cm-3 with a B/C ratio of 3.7. When hydrogen is used as the carrier gas, the film density is 2.42?g?cm-3, the B/C ratio 4.6, and the deposition rate 0.35?mu m h-1. The hydrogen content in the films is about 34 at.-%, regardless of ambient conditions during deposition, and varies only with the deposition temperature. In addition, both the film composition and the film density are found to vary significantly with the deposition temperature and the atmospheric conditions. Based upon these results, a deposition mechanism for the growth of boron-carbon films from TEB, where the TEB molecule is decomposed to BH3 and hydrocarbons, is suggested.

Publishing year

2012

Language

English

Pages

221-224

Publication/Series

Chemical Vapor Deposition

Volume

18

Issue

7-9

Document type

Journal article

Publisher

Wiley-Blackwell

Topic

  • Physical Sciences
  • Natural Sciences

Keywords

  • Boron-carbon films
  • Elastic recoil detection analysis (ERDA)
  • Low
  • temperature CVD
  • Neutron detection
  • Organoborane

Status

Published

ISBN/ISSN/Other

  • ISSN: 1521-3862