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Core-level shifts of the c(8 x 2)-reconstructed InAs(100) and InSb(100) surfaces

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Author

  • P. Laukkanen
  • M. P. J. Punkkinen
  • M. Ahola-Tuomi
  • J. Lang
  • Karina Schulte
  • Annette Pietzsch
  • M. Kuzmin
  • Janusz Sadowski
  • Johan Adell
  • R. E. Perala
  • M. Ropo
  • K. Kokko
  • L. Vitos
  • B. Johansson
  • M. Pessa
  • I. J. Vayrynen
Show all

Summary, in English

We have studied In-stabilized c(8 2)-reconstructed InAs(1 0 0) and InSb(1 0 0) semiconductor surfaces, which play a key role in growing improved III-V interfaces for electronics devices, by core-level photoelectron spectroscopy and first-principles calculations. The calculated surface core-level shifts (SCLSs) for the zeta and zeta a models, which have been previously established to describe the atomic structures of the III-V(1 00)c(8 x 2) surfaces, yield hitherto not reported interpretation for the As 3d, In 4d, and Sb 4d core-level spectra of the III-V(1 00)c(8 x 2) surfaces, concerning the number and origins of SCLSs. The fitting analysis of the measured spectra with the calculated zeta and zeta a SCLS values shows that the InSb spectra are reproduced by the zeta SCLSs better than by the zeta a SCLSs. Interestingly, the zeta a fits agree better with the InAs spectra than the zeta fits do, indicating that the zeta a model describes the InAs surface better than the InSb surface. These results are in agreement with previous X-ray diffraction data. Furthermore, an introduction of the complete-screening model, which includes both the initial and final state effects, does not improve the fitting of the InSb spectra, proposing the suitability of the initial-state model for the SCLSs of the III-V(1 0 0)c(8 x 2) surfaces. The found SCLSs are discussed with the ab initio on-site charges. (C) 2010 Elsevier B.V. All rights reserved.

Department/s

Publishing year

2010

Language

English

Pages

52-57

Publication/Series

Journal of Electron Spectroscopy and Related Phenomena

Volume

177

Issue

1

Document type

Journal article

Publisher

Elsevier

Topic

  • Natural Sciences
  • Physical Sciences

Keywords

  • Indium
  • arsenide (InAs)
  • Indium antimonide (InSb)
  • Surface reconstruction
  • Ab initio calculations
  • spectroscopy
  • Surface core-level shift (SCLS)
  • Synchrotron radiation photoelectron

Status

Published

ISBN/ISSN/Other

  • ISSN: 0368-2048