Bulk electronic structure of Mn5Ge3/Ge(111) films by angle-resolved photoemission spectroscopy

Summary, in English

Mn5Ge3(001) thin films grown on Ge(111)-c(2 x 8) reconstructed surfaces were studied by angle-resolved photoemission using synchrotron radiation in the 14-94 eV photon energy range. The results obtained in the Gamma ALM plane and in the Gamma AHK plane are in agreement with simulations starting with band structure calculations based on the density functional theory. This provides a unique validation of band structure calculations for a proper description of the electronic properties of Mn5Ge3. Only the spectral feature very close to the Fermi level cannot be well explained by the simulation. This departure is discussed in terms of the three-dimensional nature of the sample and of correlation effects.

• Author: W. Ndiaye; M. C. Richter; O. Heckmann; P. De Padova; J. -M. Mariot; A. Stroppa; S. Picozzi; W. Wang; A. Taleb-Ibrahimi; P. Le Fevre; F. Bertran; C. Cacho; Mats Leandersson; Balasubramanian Thiagarajan; K. Hricovini
• Department/s: MAX IV Laboratory
• Publishing year: 2013
• Language: English
• Publication/Series: Physical Review B (Condensed Matter and Materials Physics)
• Volume: 87
• Issue: 16
• Links: http://dx.doi.org/10.1103/PhysRevB.87.165137
• Document type: Journal article
• Publisher: American Physical Society
• Topic: Physical Sciences; Natural Sciences
• Status: Published
• ISBN/ISSN/Other: ISSN: 1098-0121