Surface states on GaN(000(1)over-bar)(1x1) - an angle-resolved photoemission study
Author
Summary, in English
We present the results of angle-resolved photoemission studies on the (0 0 0 (1) over bar) (N-polar) surface of bulk gallium nitride crystals. The bulk and surface band Structure was investigated along Gamma-A and Gamma-K-M directions on the surface with (1 x 1) symmetry. The sets of spectra were obtained in normal and off-normal emission for the surface prepared by Ar+ ion sputtering and annealing and for the same surface enriched with Ga under molecular beam epitaxy conditions. The bulk and surface related features were identified by analysis of the acquired experimental data and by comparison with the results of band structure Calculations.
Department/s
Publishing year
2002
Language
English
Pages
186-191
Publication/Series
Surface Science
Volume
507
Document type
Journal article
Publisher
Elsevier
Topic
- Natural Sciences
- Physical Sciences
Keywords
- surface potential
- function
- angle resolved photoemission
- surface electronic phenomena (work
- surface states
- etc.)
- gallium nitride
- single crystal surfaces
Status
Published
ISBN/ISSN/Other
- ISSN: 0039-6028