Nanoscale tungsten aerosol particles embedded in GaAs
Author
Summary, in English
GaAs containing buried nanoscale tungsten particles has been characterized electrically. The particles were produced using a special aerosol process and were embedded in GaAs by epitaxial overgrowth. Two different particle sizes were investigated separately. When the particle concentration was increased, a conductance drop of about 500 times was observed. A simulation model, based on a random distribution of the particles, was developed and used to support our findings. The major advantage of our method is the simplicity and low processing cost.
Publishing year
2002
Language
English
Pages
2976-2978
Publication/Series
Applied Physics Letters
Volume
80
Issue
16
Document type
Journal article
Publisher
American Institute of Physics (AIP)
Topic
- Electrical Engineering, Electronic Engineering, Information Engineering
- Condensed Matter Physics
Status
Published
ISBN/ISSN/Other
- ISSN: 0003-6951