Angle-resolved photoemission study and pseudopotential calculations of GeTe and Ge1-xMnxTe band structure
Author
Summary, in English
The valence band structure along the Γ-T and T-W-L directions in the Brillouin zone of GeTe is studied by means of angle-resolved photoemission and compared with the results of ab initio pseudopotential calculations. For Ge1-xMnxTe surface alloy, changes in the valence band induced by presence of Mn atoms are revealed.
Department/s
Publishing year
2010-01-31
Language
English
Pages
1357-1362
Publication/Series
Physics Procedia
Volume
3
Document type
Book chapter
Keywords
- Band structure
- Germanium telluride
- Photoemission
Conference name
14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14
Conference date
2009-07-13 - 2009-07-17
Conference place
Senda, Japan
Status
Published