Variation of strain in granular GaAs:MnAs layers
Author
Summary, in English
Granular GaAs(MnAs) layers with different Mn concentration and various layer thickness were grown by MBE method and subjected to annealing at 500A degrees C under ambient and enhanced hydrostatic pressure. Distinct influence of hydrostatic pressure applied during annealing on strain state of layers as well as on hexagonal MnAs inclusions was found. Pressure induced strain of inclusions is related to different bulk moduli of GaAs and of hexagonal MnAs. Formation of hexagonal inclusions depends on concentration of Mn in interstitial position in as-grown samples.
Department/s
Publishing year
2013
Language
English
Pages
998-1001
Publication/Series
Crystallography Reports
Volume
58
Issue
7
Document type
Journal article
Publisher
MAIK Nauka/Interperiodica
Topic
- Natural Sciences
- Physical Sciences
Status
Published
ISBN/ISSN/Other
- ISSN: 1063-7745