One-dimensional heterostructures in semiconductor nanowhiskers

Summary, in English

We report on the growth of designed heterostructures placed within semiconductor nanowhiskers, exemplified by the InAs/InP material system. Based on transmission electron microscopy, we deduce the interfaces between InAs and InP to be atomically sharp. Electrical measurements of thermionic emission across an 80-nm-wide InP heterobarrier, positioned inside InAs whiskers 40 nm in diameter, yield a barrier height of 0.6 eV. On the basis of these results, we propose new branches of physics phenomena as well as new families of device structures that will now be possible to realize and explore.

• Author: Mikael Björk; Jonas Ohlsson; T Sass; Ann Persson; Claes Thelander; Martin Magnusson; Knut Deppert; Reine Wallenberg; Lars Samuelson
• Department/s: Solid State Physics; Centre for Analysis and Synthesis
• Publishing year: 2002
• Language: English
• Pages: 1058-1060
• Publication/Series: Applied Physics Letters
• Volume: 80
• Issue: 6
• Links: http://dx.doi.org/10.1063/1.1447312
• Document type: Journal article
• Publisher: American Institute of Physics (AIP)
• Topic: Condensed Matter Physics; Chemical Sciences
• Status: Published
• ISBN/ISSN/Other: ISSN: 0003-6951