The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Polytype Attainability in III-V Semiconductor Nanowires

På svenska

Author

Summary, in English

We propose a model that explains the phenomenon of polytypism in metal particle-seeded III-V semiconductor nanowires. The model is based on classical nucleation theory, utilizing the axial next-nearest-neighbor Ising (ANNNI) model to account for interlayer interaction up to the third nearest-neighboring layer. We investigate the limits of polytypism by varying the ANNNI interaction parameters. These calculations lead to attainability diagrams, which show the regions in interaction energy space where certain polytypes can be attained given that the supersaturation is precisely tuned. We calculate the values of the ANNNI interaction parameters for six common III- V materials from first principles by means of the projector-augmented wave method. We discuss our calculated values in view of previous results. Using these calculated values in our nucleation model, our analysis suggests that besides the commonly observed 3C (zinc blende) and 2H (wurtzite) polytypes the higher order polytypes 4H and 6H can also be attained, in agreement with experimental observations.

Publishing year

2016

Language

English

Pages

371-379

Publication/Series

Crystal Growth & Design

Volume

16

Issue

1

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Nano Technology

Status

Published

ISBN/ISSN/Other

  • ISSN: 1528-7483