RF Characterization of Vertical InAs Nanowire MOSFETs with f(t) and f(max) above 140 GHz

Summary, in English

We present RF characterization of vertical gateall- around InAs nanowire MOSFETs integrated on Si substrates with peak f(t) = 142 GHz and f(max) = 155 GHz, representing the record for vertical nanowire transistors. The devices has an L-g approximate to 150 nm with a g(m)=700 mS/mm for a nanowire diameter of 38 nm and an EOT = 1.4 nm. The high values of f(t) is achieved through electron beam lithography patterning of the gate and drain contact which substantially decreases the parasitic capacitances through reduction of the overlay capacitance, which is in good agreement with TCAD modeling.

• Author: Sofia Johansson; Elvedin Memisevic; Lars-Erik Wernersson; Erik Lind
• Department/s: Department of Electrical and Information Technology; NanoLund: Centre for Nanoscience
• Publishing year: 2014
• Language: English
• Publication/Series: 26th International Conference on Indium Phosphideand Related Materials (IPRM)
• Document type: Conference paper
• Publisher: IEEE - Institute of Electrical and Electronics Engineers Inc.
• Topic: Electrical Engineering, Electronic Engineering, Information Engineering
• Conference name: 26th International Conference on Indium Phosphide and Related Materials (IPRM)
• Conference date: 2014-05-11 - 2014-05-15
• Status: Published
• ISBN/ISSN/Other: ISSN: 1092-8669