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Ferromagnetism and the electronic band structure in (Ga,Mn)(Bi,As) epitaxial layers

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Author

  • O. Yastrubchak
  • Janusz Sadowski
  • L. Gluba
  • J. Z. Domagala
  • M. Rawski
  • J. Zuk
  • M. Kulik
  • T. Andrearczyk
  • T. Wosinski

Summary, in English

Impact of Bi incorporation into (Ga,Mn)As layers on their electronic-and band-structures as well as their magnetic and structural properties has been studied. Homogenous (Ga,Mn)(Bi,As) layers of high structural perfection have been grown by the low-temperature molecular-beam epitaxy technique. Post-growth annealing treatment of the layers results in an improvement of their structural and magnetic properties and an increase in the hole concentration in the layers. The modulation photoreflectance spectroscopy results are consistent with the valence-band model of hole-mediated ferromagnetism in the layers. This material combines the properties of (Ga,Mn)As and Ga(Bi,As) ternary compounds and offers the possibility of tuning its electrical and magnetic properties by controlling the alloy composition. (C) 2014 AIP Publishing LLC.

Department/s

Publishing year

2014

Language

English

Publication/Series

Applied Physics Letters

Volume

105

Issue

7

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Natural Sciences
  • Physical Sciences

Status

Published

ISBN/ISSN/Other

  • ISSN: 0003-6951