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In0.53Ga0.47As Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels

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Author

Summary, in English

We report on In0.53Ga0.47As n-channel multiple-gate field-effect transistors (MuGFETs or FinFETs) with a novel method of selectively regrown lateral (parallel to substrate) nanowires as channels. The device exhibits a minimum subthreshold slope of 85 mV/decade and drain-induced barrier lowering of 88 mV/V at V-DS = 0.05 V and L-G = 200 nm. At V-DS = 0.5 V, (gm), (max) = 1.67 mS/mu m is achieved (L-G = 32 nm). The extrapolated cutoff frequency f(T) of 210 GHz and the maximum oscillation frequency f(max) of 250 GHz are the highest of any reported III-V multiple-gate MOSFET.

Publishing year

2014

Language

English

Pages

342-344

Publication/Series

IEEE Electron Device Letters

Volume

35

Issue

3

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • FinFET
  • InGaAs
  • MOSFET
  • selective regrowth
  • MuGFET
  • III-V
  • trigate

Status

Published

ISBN/ISSN/Other

  • ISSN: 0741-3106