The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Recent advances in semiconductor nanowire heterostructures

På svenska

Author

Summary, in English

Semiconductor nanowires have made a deep impact on materials science related research, and are being explored for applications in several disciplines. Many of these applications require heterostructures, which can be defined as the combination of two or more materials within the same nanowire structure. In this paper we briefly review the current state-of-the-art concerning epitaxial nanowire heterostructures. We discuss growth, understanding, and promising applications of such structures, which we divide into three categories: nanowire-substrate, axial, and radial heterostructures. For each of these categories, we review recent experimental results, and address possible difficulties and how they have been resolved. In addition, we also highlight interesting applications relying on heterostructures in nanowires. To illustrate that nanowires and their heterostructures have been grown in a plethora of materials, we pick examples from a wide range of semiconductor materials.

Publishing year

2011

Language

English

Pages

7175-7184

Publication/Series

CrystEngComm

Volume

13

Issue

24

Document type

Journal article

Publisher

Royal Society of Chemistry

Topic

  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Other

  • ISSN: 1466-8033