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High Transconductance, f(t) and f(max) in In0.63Ga0.37As FinFETs Using A Novel Fin Formation Technique

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Author

Summary, in English

We report on In0.63Ga0.37As FinFETs utilizing nanowires grown by selective-area growth as channel. These nanowires are defined by crystallographic planes rather than pattern transfer using etching. The fabricated devices exhibit maximum transconductance g(m,max) = 2.05 mS/um at V-ds = 0.5 V, as well as record-high extrapolated f(t) = 300 GHz and f(max) = 342 GHz, on the non-planar III-V MOSFET platform.

Publishing year

2014

Language

English

Publication/Series

26th International Conference on Indium Phosphide and Related Materials (IPRM)

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

26th International Conference on Indium Phosphide and Related Materials (IPRM)

Conference date

2014-05-11 - 2014-05-15

Status

Published

ISBN/ISSN/Other

  • ISSN: 1092-8669