Luminescence polarization of ordered GaInP/InP islands
Author
Summary, in English
The luminescence polarization properties of GaInP islands have been investigated. The islands, which form during overgrowth of InP quantum dots, were studied using scanning tunneling luminescence (STL) and photoluminescence (PL). STL from these islands shows emission at an energy below the main emission peak of the bulk GaInP. The linear PL polarization anisotropy was measured at low temperature, for which the emission from the islands shows high polarization anisotropy. The intensity maximum for the emission occurs for light polarized parallel to the elongation of the islands. The observed linear PL polarization anisotropy indicates the presence of highly ordered domains of GaInP in the islands. (C) 2003 American Institute of Physics.
Department/s
Publishing year
2003
Language
English
Pages
627-629
Publication/Series
Applied Physics Letters
Volume
82
Issue
4
Document type
Journal article
Publisher
American Institute of Physics (AIP)
Topic
- Condensed Matter Physics
Status
Published
ISBN/ISSN/Other
- ISSN: 0003-6951