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Crystal structure of branched epitaxial III-V nanotrees

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Author

Summary, in English

In this review we discuss the morphology and crystal structure of branched epitaxial III-V semiconductor structures, so called nanotrees, based on our own work with GaP, InAs and GaP/InP. These structures are formed by epitaxial growth in a step-wise procedure where each level can be individually controlled in terms of diameter, length and composition. Poly-typism is commonly observed for III-Vs with zinc blende, wurtzite or combinations thereof as the resulting crystal structure. Here we review GaP as an example of zinc blende and InAs of wurtzite type of growth in terms of nanotrees with two to three levels of growth. Included are also previously unpublished results on the growth of GaP/InP nanotrees to demonstrate effects of heteroepitaxial growth with substantial mismatch. For these structures a topotaxial growth behavior was observed with InP wires crawling along or spiraling around the GaP nanowires acting as a free-standing substrates.

Publishing year

2006

Language

English

Pages

139-151

Publication/Series

Nano

Volume

1

Issue

2

Document type

Journal article

Publisher

World Scientific Publishing

Topic

  • Chemical Sciences
  • Condensed Matter Physics

Keywords

  • metal-organic vapor phase epitaxy (MOVPE)
  • crystal structure
  • III-V
  • nanotrees
  • TEM

Status

Published

ISBN/ISSN/Other

  • ISSN: 1793-2920