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Epitaxial growth and surface studies of the Half Heusler compound NiTiSn (001)

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Author

Summary, in English

The Half Heuslers are currently an attractive family of compounds for high temperature thermoelectrics research, and recently, there has been renewed interest since some of these compounds are proposed to be topological insulators. NiTiSn belongs to the family of 18 valence electron Half Heuslers that are predicted to be semiconducting, despite being composed entirely of metallic elements. The growth of the Half Heusler compound NiTiSn by molecular beam epitaxy is demonstrated. The NiTiSn films are epitaxial and single crystalline as observed by reflection high-energy electron diffraction and x-ray diffraction. Temperature dependent transport measurements suggest the films may be semiconducting, but with a high background carrier density indicative of a high density of electrically active defect states. Methods of protecting the sample surface for synchrotron-based photoemission measurements are explored. These methods may be applied to the study of surface electronic structure in unconventional materials. (C) 2013 American Vacuum Society.

Publishing year

2013

Language

English

Publication/Series

Journal of Vacuum Science and Technology B

Volume

31

Issue

4

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Natural Sciences
  • Atom and Molecular Physics and Optics
  • Physical Sciences

Status

Published

ISBN/ISSN/Other

  • ISSN: 1520-8567