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Changes induced in the surface electronic structure of Be(0001) after Si adsorption

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Author

Summary, in English

A study of effects induced in the Be is core level spectrum and in the surface band structure after Si adsorption on Be(0001) is reported. The changes in the Be is spectrum are quite dramatic. The number of resolvable surface components and the magnitude of the shifts do decrease and the relative intensities of the shifted components are drastically different compared to the clean surface. The surface band structure is also strongly affected after Si adsorption and annealing. At (&UGamma;) under bar the surface state is found to move down from 2.8 to 4.1 eV. The band also splits at around 0.5 Angstrom(-1) along both the (&UGamma;-K) under bar and (&UGamma;-M) under bar directions. At (M) under bar and beyond (K) under bar only one surface state is observed in the band gap instead of the two for the clean surface. Our findings indicate that a fairly small amount of Si in the outer atomic layers strongly modifies the electronic properties of these layers.

Department/s

Publishing year

2002

Language

English

Pages

687-691

Publication/Series

Surface Review and Letters

Volume

9

Issue

2

Document type

Journal article

Publisher

World Scientific Publishing

Topic

  • Natural Sciences
  • Physical Sciences

Status

Published

ISBN/ISSN/Other

  • ISSN: 0218-625X