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Single Balanced Down-Conversion Mixer Utilizing Indium Arsenide Nanowire MOSFETs

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Author

Summary, in English

We have fabricated single balanced down-conversion mixer circuits using InAs nanowire MOSFETs as both active and passive devices. This is achieved by a combination of electron beam lithography and UV-lithography with a line width of 12 mu m. The circuits exhibit a low frequency voltage conversion gain of 6 dB, a -3 dB cutoff frequency of 2 GHz and a power consumption of 3.8 mW, while operating at a supply voltage of 1.5 V. The circuits retain circuit functionality even for a supply voltage of 1 V.

Publishing year

2014

Language

English

Publication/Series

26th International Conference on Indium Phosphideand Related Materials (IPRM)

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

26th International Conference on Indium Phosphide and Related Materials (IPRM)

Conference date

2014-05-11 - 2014-05-15

Status

Published

ISBN/ISSN/Other

  • ISSN: 1092-8669