Technology and studies of electron transport in InAs nanowire junctions
Author
Summary, in English
The topic of this thesis is technology and experimental studies of electron transport in Indium Arsenide (InAs) nanowires and InAs nanowire junctions. The aim of this work has been fabrication of nanoelectronic devices which have possibilities for future nanoelectronics.
The first chapter gives an introduction to modern electronics and some important concepts. The second chapter presents an overview of electron transport in three-terminal conductor junctions. The third chapter introduces the InAs self-forming nanowires. The paper attached to the thesis deals with the technology of the formation of electrical contacts to InAs nanowires. The electrical properties of the three-terminal nanowire junction devices and the device applications are shown and discussed in the manuscript attached to the thesis.
The first chapter gives an introduction to modern electronics and some important concepts. The second chapter presents an overview of electron transport in three-terminal conductor junctions. The third chapter introduces the InAs self-forming nanowires. The paper attached to the thesis deals with the technology of the formation of electrical contacts to InAs nanowires. The electrical properties of the three-terminal nanowire junction devices and the device applications are shown and discussed in the manuscript attached to the thesis.
Department/s
Publishing year
2007
Language
English
Document type
Licentiate thesis
Publisher
Division of Solid State Physics, Department of Physics, Lund Institute of Technology