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Sn-Seeded GaAs Nanowires as Self-Assembled Radial p-n Junctions

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Author

Summary, in English

The widespread use of Au as a seed particle in the fabrication of semiconductor nanowires presents a fundamental limitation to the potential incorporation of such nanostructures into electronic devices. Although several other growth techniques have been demonstrated, the use of alternative seed particle metals remains an underexplored but potentially very promising way to influence the properties of the resulting nanowires while simultaneously avoiding gold. In this Letter, we demonstrate the use of Sn as a seed particle metal for GaAs nanowires grown by metal-organic vapor phase epitaxy. We show that vertically aligned and stacking defect-free GaAs nanowires can be grown with very high yield. The resulting nanowires exhibit Esaki diode behavior, attributed to very high n-doping of the nanowire core with Sn, and simultaneous C-doping of the radial overgrowth. These results demonstrate that the use of alternative seed particle metals is a potentially important area to explore for developing nanowire materials with controlled material properties.

Publishing year

2015

Language

English

Pages

3757-3762

Publication/Series

Nano Letters

Volume

15

Issue

6

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Nano Technology
  • Materials Chemistry

Keywords

  • Nanowires
  • III-V semiconductors
  • vapor-phase epitaxy
  • GaAs
  • transmission
  • electron microscopy
  • doping p-n junction

Status

Published

ISBN/ISSN/Other

  • ISSN: 1530-6992