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High-k oxides on InAs 100 and 111B surfaces

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Author

Summary, in English

Al2O3 and HfO2 high-k oxides deposited by atomic layer deposition have been studied on InAs 100 and 111B surfaces. By using a low-frequency fitting routine, interface defect densities have been extracted. In general, both HfO2 and Al2O3 show similar D-it profiles, with a D-it minimum around 2x10(12) eV(-1)cm(-2).

Publishing year

2012

Language

English

Pages

61-67

Publication/Series

Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and-Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices

Volume

45

Issue

3

Document type

Conference paper

Publisher

Electrochemical Society

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

5th International Symposium on Dielectrics for Nanosystems - Materials Science, Processing, Reliability and Manufacturing as Part of the 221st Meeting of the Electrochemical-Society (ECS)

Conference date

2012-05-06 - 2012-05-10

Status

Published

ISBN/ISSN/Other

  • ISSN: 1938-6737
  • ISSN: 1938-5862