Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors

Summary, in English

Off-state drain leakage current has been investigated for InGaAs-based metal-oxide-semiconductor field-effect transistors with different drain configurations, InGaAs, and InP, respectively. The introduction of an InP drain presents a lower leakage current compared to InGaAs drain devices. From temperature dependent measurements, the leakage current mechanisms have been differentiated, and the role of drain direct band-to-band tunneling, as well as gate-induced drain leakage, has been identified. (C) 2014 AIP Publishing LLC.

• Author: Jiongjiong Mo; Erik Lind; Guntrade Roll; Lars-Erik Wernersson
• Department/s: Department of Electrical and Information Technology; NanoLund: Centre for Nanoscience
• Publishing year: 2014
• Language: English
• Publication/Series: Applied Physics Letters
• Volume: 105
• Issue: 3
• Links: http://dx.doi.org/10.1063/1.4891569
• Document type: Journal article
• Publisher: American Institute of Physics (AIP)
• Topic: Electrical Engineering, Electronic Engineering, Information Engineering
• Status: Published
• ISBN/ISSN/Other: ISSN: 0003-6951