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Annular Fast Electron Transport in Silicon Arising from Low-Temperature Resistivity

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Author

  • D. A. MacLellan
  • D. C. Carroll
  • R. J. Gray
  • N. Booth
  • Matthias Burza
  • M. P. Desjarlais
  • F. Du
  • B. Gonzalez-Izquierdo
  • D. Neely
  • H. W. Powell
  • A. P. L. Robinson
  • D. R. Rusby
  • G. G. Scott
  • X. H. Yuan
  • Claes-Göran Wahlström
  • P. McKenna
Show all

Summary, in English

Fast electron transport in Si, driven by ultraintense laser pulses, is investigated experimentally and via 3D hybrid particle-in-cell simulations. A transition from a Gaussian-like to an annular fast electron beam profile is demonstrated and explained by resistively generated magnetic fields. The results highlight the potential to completely transform the beam transport pattern by tailoring the resistivity-temperature profile at temperatures as low as a few eV.

Publishing year

2013

Language

English

Publication/Series

Physical Review Letters

Volume

111

Issue

9

Document type

Journal article

Publisher

American Physical Society

Topic

  • Natural Sciences
  • Atom and Molecular Physics and Optics
  • Physical Sciences

Status

Published

ISBN/ISSN/Other

  • ISSN: 1079-7114