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High Frequency InGaAs Nanowire MOSFETs

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Author

Summary, in English

We present compact modeling, DC and RF characterization of lateral and vertical nanowire MOSFETs. Lateral tri-gate nanowire devices on InP substrates have demonstrated a maximum gm=2.95 mS/ μm at VDS=0.5 V, and fT/fmax=290/350 GHz. Vertical gate-all-around InAs wires integrated on Si substrates have demonstrated gm=1.35 mS/μm and fT/fmax=100/155 GHz. We also demonstrate a non- parabolic, ballistic charge/current compact model for rectangular nanowire FETs.

Publishing year

2015-10-30

Language

English

Publication/Series

2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • III-V
  • Indium gallium arsenide
  • Millimeter wave transistors
  • MOSFET
  • Nanowires

Conference name

37th IEEE International Symposium on Workload Characterization, IISWC 2015

Conference date

2015-10-11 - 2015-10-14

Conference place

New Orleans, United States

Status

Published

ISBN/ISSN/Other

  • ISBN: 9781479984947